Micro-tube Sapphire Crystal Grown by the Edge-defined-film Fed Method

Inequalities for Single Crystal Tube Growth by Edge-Defined Film-Fed Growth Technique

The axi-symmetric Young-Laplace differential equation is analyzed. Solutions of this equation can describe the outer or inner free surface of a static meniscus the static liquid bridge free surface between the shaper and the crystal surface occurring in single crystal tube growth. The analysis concerns the dependence of solutions of the equation on a parameter p which represents the controllabl...

Inequalities for Single Crystal Ribbon Growth by Edge-Defined Film-Fed Growth Technique

A second-order nonlinear differential equation, of which some solutions describe the static meniscus free surface the static liquid bridge free surface between the shaper and the crystal surface occurring in single crystal ribbon growth, is analyzed. The analysis is focusing on the dependence of the solutions of the equation on the pressure difference p across the free surface. Inequalities are...

An Investigation on Two Types of Crystalline Micro-diamond Film Coated Tools Lapping with Sapphire Wafer

Two types of micron-diamond films were prepared on YG6 substrate by hot filament chemical vapor deposition(HFCVD) method. Morphology and orientation of crystalline growth were evaluated by SEM and XRD. Diamond film coated tools and sapphire wafer’ surface before and after lapping experiment  were contrasted. The results indicated that a significant change in Raman spectrum of two types of micro...

High-Quality GaSe Single Crystal Grown by the Bridgman Method

A high-quality GaSe single crystal was grown by the Bridgman method. The X-ray rocking curve for the studied GaSe sample is symmetric and the Full Width at Half Maximum (FWHM) is only 46 arcs, which is the smallest value ever reported for GaSe crystals. The IR-transmittance is about 66% in the range from 500 to 4000 cm-1. The photoluminescence spectrum at 9.2 K shows a symmetric and sharp excit...

The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire